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The unit of mobility of semiconductor is

  • A.\(m^{2} v^{-1} s^{-1}\)
  • B.\(m v^{-1} s^{-1}\)
  • C.\(v s m^{-1}\)
  • D.\(v m s^{-1}\)

Answer: A

Mobility is the drift velocity per unit electric field, \(\mu = v/E\), so its unit is (m/s) divided by (V/m), that is \(m^{2} V^{-1} s^{-1}\). The option \(m V^{-1} s^{-1}\) lacks one power of metre, while \(V s m^{-1}\) and \(V m s^{-1}\) are not dimensions of a velocity-per-field ratio at all. Typical values at room temperature are about 0.14 m^2/Vs for electrons in silicon and 0.05 m^2/Vs for holes, and the drift velocity is the product of this mobility and the field, which is why the unit is the one given. The answer is \(m^{2} V^{-1} s^{-1}\).

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