Discussion
Mobility of electrons for Silicon (intrinsic) at 300 K is :
Answer: A
The electron mobility in intrinsic silicon at 300 K is 1350 cm\(^{2}\)/s as printed, that is 1350 cm\(^{2}\)/V·s.
The standard textbook values at room temperature are about 1350 (often 1400 or 1450) cm\(^{2}\)/V·s for electrons and about 480 cm\(^{2}\)/V·s for holes in silicon. The paper drops the per volt from the unit, but the number identifies the answer.
3900 cm\(^{2}\)/V·s is the electron mobility of germanium, and about 8500 cm\(^{2}\)/V·s is that of gallium arsenide, whose light electrons make it a high-speed material. 5000 is not the value for any of these common semiconductors.
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