Discussion
The technique of growing an oriented single crystal layer on a substrate wafer is called :
Answer: C
The technique is epitaxy.
Epitaxy (Greek epi, upon, and taxis, arrangement) is the growth of a thin single-crystal layer on a single-crystal substrate so that the layer continues the substrate's crystal orientation. Vapour phase epitaxy, for example, deposits silicon from silane or silicon tetrachloride onto a heated wafer, and the layer's doping can be set independently of the substrate.
Oxidation grows an amorphous SiO2 layer, ion implantation and diffusion introduce dopants into the existing crystal; none of them grows a new oriented crystal layer.
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