Machine-translated by Google. Questions are authored in English.
Top

Discussion

For an N-channel depletion type MOSFET, the value of drain current at zero \(V_{GS}\) (gate to source voltage), \(I_{DSS} = 10\) mA. What is the value of drain current at \(V_{GS} = +1\) V? The value of pinch off voltage \(V_P = -4\) V.

  • A.1.563 mA
  • B.15.63 mA
  • C.156.3 mA
  • D.0.1563 mA

Answer: B

The drain current of a depletion type MOSFET follows the Shockley equation


\[ I_D = I_{DSS}\left(1 - \frac{V_{GS}}{V_P}\right)^2 \]


\[ \begin{aligned} I_D = 10\left(1 - \frac{1}{-4}\right)^2 \\ &= 10\left(1 + 0.25\right)^2 = 10 \times 1.5625 \\ &= 15.63\ \text{mA} \end{aligned} \]


The depletion MOSFET can work with a positive gate voltage (enhancement mode), so the current is greater than \(I_{DSS}\). The value 1.563 mA is a factor of ten too small, 156.3 mA is a factor of ten too large, and 0.1563 mA is a hundred times too small. The answer is option B.

No comment is present. Be the first to comment.
Loading…

Post your comment

Please log in or register to post a comment.