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Assertion (A) : PIN diodes have wider depletion region, in order to allow light to penetrate more deeply in the semiconductor material.

Reason (R) : III-V semiconductor materials are used to fabricate in order to allow shorter wavelength in the region of 400-700 nm.

  • A.Both (A) and (R) are true and (R) is the correct explanation of (A).
  • B.Both (A) and (R) are true, but (R) is not the correct explanation of (A).
  • C.(A) is true but (R) is false.
  • D.(A) is false and (R) is true.

Answer: C

The Assertion is true and the Reason is false, option (C). A PIN diode has an intrinsic layer, which gives a wider depletion region and allows light to penetrate more deeply into the semiconductor.

The Reason is wrong, because III-V materials are used to make devices for longer wavelengths in the infrared, which silicon does not cover, and not for shorter wavelengths of 400 to 700 nm. Options A and B need a true Reason and option D a false Assertion.

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