Discussion
Wet oxidation is given by :
Answer: C
Wet oxidation is Si + \(\mathrm{2H_2O}\).
In wet (steam) oxidation, silicon reacts with water vapour at about 900-1100 °C to form silicon dioxide and release hydrogen:
\[ \mathrm{Si + 2H_2O \rightarrow SiO_2 + 2H_2} \]
It grows oxide much faster than dry oxidation and is used for thick field oxides. Si + \(\mathrm{O_2}\) is dry oxidation, which grows a slower, denser oxide used for gate oxides. HF does not oxidise silicon; it etches silicon dioxide. Hydrogen does not form an oxide at all.
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