Discussion
Which of the following statements is true in case of CMOS fabrication?
Answer: D
The key gives Fabrication of p-MOS transistor requires few additional steps compared to n-MOS transistor.
In the common n-well CMOS process the starting wafer is p-type, so the nMOS transistors are built directly in the substrate. The pMOS transistors need an n-type region to sit in, which means extra steps: an n-well mask, the n-well implant and drive-in, and a separate p+ source/drain implant with its own mask. So the pMOS device is the one that costs additional processing.
The first option reverses this. The second is wrong because the two devices need different well and implant steps, and the third, while loosely true, does not identify the specific point the question tests.
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