Discussion
Where are the silicon wafers placed in the reaction chamber for the epitaxial growth process ?
Answer: B
The key gives Boats.
In furnace-type processing the wafers are stood or laid in a carrier called a boat (quartz, or graphite coated with silicon carbide in an epitaxial reactor, where the heated carrier is also called the susceptor) and pushed into the reaction chamber. The gas carrying the silicon source, for example silicon tetrachloride or silane in hydrogen, flows over the heated wafers and deposits a single-crystal silicon layer.
An ingot is the large single crystal grown by the Czochralski process, from which wafers are sliced, so wafers are not placed in it. A crucible holds molten silicon during crystal growth, not wafers. 'Cup' is not the term used for a wafer carrier.
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