Discussion
Which of the following is used to obtain silicon single crystal structure while fabricating integrating circuits ?
Answer: B
Single-crystal silicon layers are obtained by epitaxial growth.
Epitaxy deposits a thin layer of silicon on a single-crystal wafer so that the new layer continues the crystal structure of the substrate. It is used, for example, to grow a lightly doped layer over a heavily doped substrate or buried layer, as in bipolar ICs, with doping controlled independently of the substrate.
Oxidation grows amorphous silicon dioxide, not crystal silicon. Photolithography transfers patterns. Wafer preparation produces the starting substrate; it does not build up single-crystal layers during IC fabrication, which is what the question asks.
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