Discussion
Assertion (A) : A p-channel enhancement MOSFET based transistor can be turn on prematurely.
Reason (R) : Most contaminants in MOS fabrication are mobile positively charged ions and they get trapped between the gate and the substrate in a n-channel enhancement MOSFET, whereas they are trapped on the other side of the substrate in the case of a p-channel enhancement MOSFET.
Answer: A
The key takes both statements as correct and the reason as the explanation, the first option. Mobile positive ions, such as sodium, trapped in the oxide between the gate and the substrate, add a positive charge that acts like a positive gate voltage on the channel.
In a p-channel enhancement device, which needs a negative gate voltage to turn on, this shifts the threshold so that the device can turn on prematurely, and the reason describes this contamination. So the reason explains the assertion, and the options that deny this are not the keyed answer.
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