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ASSERTION (A) : Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate.
REASON (R) : An epitaxial layer cannot be doped during growth phase.

  • A.Both (A) and (R) are true and (R) is correct explanation of (A)
  • B.Both (A) and (R) are true but (R) is not correct explanation of (A)
  • C.(A) is true but (R) is false
  • D.(A) and (R) both are false

Answer: C

The answer is (A) is true but (R) is false.

The Assertion is the standard definition: epitaxy is the deposition of a crystalline overlayer on a crystalline substrate, the layer following the substrate's crystal structure and orientation.

The Reason is false. One of the main advantages of epitaxy is that the layer can be doped during growth, by adding a dopant gas such as phosphine (PH3), arsine or diborane to the reactor. This in-situ doping lets a lightly doped layer be grown on a heavily doped substrate, as for the collector of a bipolar transistor.

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