Discussion

Match List I with List II :

List I	List II
(a) Si + O₂	(1) Wet oxidation
(b) Si + 2H₂O	(2) Operates for only few seconds at high temperatures
(c) Ion implantation	(3) Dry oxidation
(d) Rapid thermal processing	(4) Projected range

Codes : (a) (b) (c) (d)

Answer: C

The correct code is (3) (1) (4) (2).

(a) Si + O₂ → SiO₂ uses dry oxygen: dry oxidation.
(b) Si + 2H₂O → SiO₂ + 2H₂ uses steam: wet oxidation.
(c) In ion implantation the mean depth the ions reach is called the projected range.
(d) Rapid thermal processing heats the wafer to high temperature for only a few seconds.

Options B and D swap dry and wet oxidation, and option A gives ion implantation the few-seconds heating that belongs to rapid thermal processing.

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