Discussion
In a silicon diode, the potential barrier at room temperature is approximately
Answer: A
The barrier potential of a silicon diode is about 0.7 V.
The built-in potential across the depletion region of a silicon PN junction at room temperature is about 0.6-0.7 V. So a silicon diode conducts noticeably only once the forward bias reaches roughly that cut-in voltage.
0.3 V is the figure for germanium. 1.1 V (more exactly 1.12 eV) is the band-gap energy of silicon, not its barrier potential. 0.1 V is too low for any common semiconductor junction.
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