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The tunnel diode is useful in microwave oscillators and amplifiers because of the following reasons :

  • A.Because it is lightly doped as compared to PN junction diode.
  • B.Because it absorbs power.
  • C.Because it exhibits a negative resistance characteristic in the region between peak current \(I_{P}\) and valley current \(I_{V}\).
  • D.Because it exhibits a positive resistance characteristic in the region between peak current \(I_{P}\) and valley current \(I_{V}\).

Answer: C

The tunnel diode is useful because it exhibits a negative resistance characteristic in the region between peak current IP and valley current IV.

A tunnel diode is very heavily doped, so its depletion layer is extremely thin and electrons can tunnel through the barrier. As forward voltage rises, current first rises to a peak and then falls to a valley as the bands move out of alignment. In that falling region, current decreases while voltage increases, a negative resistance, which can cancel the losses of a tuned circuit and sustain oscillation or provide gain at microwave frequencies.

The diode is heavily, not lightly, doped. A negative resistance supplies power to the circuit rather than absorbing it, and a positive resistance in that region would make it useless as an oscillator.

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