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The INCORRECT statement is

  • A.The lattice structure of Ge is called diamond like structure
  • B.The number of electrons in the outermost orbit of Si is 4
  • C.The energy band gap of semiconductors is less than 3 eV
  • D.The number of free electrons is equal to number of holes in Ge
  • E.The energy band gap of Ge is greater than 4 eV

Answer: E

The incorrect statement is the energy band gap of Ge is greater than 4 eV.

Germanium's band gap is only about 0.7 eV, which is what makes it a semiconductor. A gap above about 3 eV is typical of insulators; diamond's is about 5.5 eV.

The other statements are correct: germanium and silicon crystallise in the diamond-like lattice, silicon has four electrons in its outermost shell, semiconductors have band gaps below about 3 eV, and in pure (intrinsic) germanium every electron freed into the conduction band leaves a hole, so the numbers of free electrons and holes are equal.

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