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Band gap of SiO2 in electron volt is :

  • A.1.12 eV
  • B.1.42 eV
  • C.5 eV
  • D.8 eV

Answer: D

The band gap of SiO2 is about 8 eV.

Silicon dioxide is an excellent insulator, with a band gap usually quoted as about 8 to 9 eV. This wide gap is why thermally grown SiO2 serves as the gate dielectric and as an insulating and masking layer in silicon technology.

1.12 eV is the band gap of silicon and 1.42 eV that of gallium arsenide, both semiconductors, and 5 eV is far too small for SiO2; it is closer to the gap of diamond.

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