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Which family is less prone to thermal runaway in a power stage?

  • A.Both are equally prone once properly heatsinked
  • B.Field effect, because its threshold voltage falls with temperature
  • C.Field effect, because on-resistance rises with temperature
  • D.Bipolar, because its saturation voltage falls with temperature

Answer: C

A MOSFET's on-resistance rises as it heats, so a hot device carries less of a shared current and the imbalance self-corrects - which is why MOSFETs parallel readily and bipolar devices need ballast resistors. The threshold does fall with temperature, working the other way, but the resistance effect dominates in the conducting state. A device whose imperfection acts as negative feedback is far easier to use in parallel.

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