Discussion
Consider the following statements about MOSFETs.
1. The gate is insulated by an oxide layer
2. Enhancement types have no channel at zero gate voltage
3. The gate draws a small leakage current through the oxide
Which of the statements given above is or are correct?
Answer: A
The first two are correct and the third is essentially false: the oxide is an insulator and the gate current is immeasurably small, which is both the device's strength and the reason static charge accumulates on it. A junction field effect transistor's gate does leak a little, since it is a reverse-biased junction, and confusing the two families on this point is the trap. A limit that survives making every external component ideal is an intrinsic one, and worth knowing for that reason.
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