Discussion
Why is a junction field effect transistor's gate leakage worse at high temperature?
Answer: A
The gate is a reverse-biased junction, so its leakage is a saturation current and roughly doubles every ten degrees - nanoamps at room temperature but microamps in a hot enclosure. There is no oxide in a junction device, which is the difference from a MOSFET. Knowing which structure a leakage path belongs to predicts how it will behave with temperature, and here it behaves like every other reverse-biased junction.
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