Discussion
Consider the following statements about field effect transistor temperature behaviour.
1. Drain current falls as the device warms, at a fixed gate voltage
2. Gate leakage in a junction device doubles every ten degrees
3. A MOSFET's on-resistance falls as it warms
Which of the statements given above is or are correct?
Answer: B
The first two are correct and the third is the reverse: on-resistance rises with temperature, which is precisely what makes current sharing between paralleled devices self-correcting. Getting that direction right matters, because it is the whole reason MOSFETs parallel without ballast resistors while bipolar devices do not.
No comment is present. Be the first to comment.
Loading…
Post your comment
Please log in or register to post a comment.
Examination Categories
- SSC Exams
- Banking Exams
- Teaching Exams
- Civil Services Exams
- Railways Exams
- Engineering Recruitment Exams
- Defence Exams
- State Government Exams
- Police Exams
- Insurance Exams
- Nursing Exams
- Other Government Exams
- NRA CET
- PG Entrance Exams
- Campus Placement
- MBA Entrance Exams
- CUET and UG Entrance
- Judiciary Exams
- Regulatory Body Exams
- Software Development