Discussion
Why is an insulated-gate bipolar device used instead of a MOSFET at high voltage?
Answer: B
A high-voltage MOSFET needs a thick drift region, and its on-resistance rises steeply with the voltage rating, so the quadratic loss law becomes punitive - whereas a bipolar-output device keeps a roughly constant drop of a couple of volts. Its gate charge is comparable or larger, it switches more slowly rather than faster, and its gate is a MOSFET gate so the input impedance is the same. Combining a MOSFET input with a bipolar output takes the voltage-driven gate and the constant conducting drop together, which is exactly the compromise high-voltage switching wants.
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