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In nMOS device, gate material could be :

  • A.Silicon
  • B.Polysilicon
  • C.Boron
  • D.Phosphorus

Answer: B

The gate material could be polysilicon.

Heavily doped polycrystalline silicon replaced aluminium as the standard MOS gate material in the 1970s. It withstands the high-temperature steps after gate formation, which allows the self-aligned gate process in which the gate itself masks the source and drain implants, and its doping can be chosen to set the threshold voltage. Advanced processes have since moved to metal gates with high-k dielectrics.

Single-crystal silicon is the substrate, not the gate. Boron and phosphorus are dopants used to make p-type and n-type regions; they are not gate electrode materials themselves.

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