Discussion
Field breakdown voltage for silicon used in power devices is :
Answer: B
The breakdown field of silicon is about 300 kV/cm.
The critical electric field for avalanche breakdown in silicon is about \(3 \times 10^{5}\) V/cm, depending somewhat on doping. This figure sets how thick the drift region of a power device must be for a given blocking voltage, and is why high-voltage silicon devices need wide, lightly doped regions.
100 kV/cm is too low. Around 1 MV/cm is not silicon's figure, and about 10 MV/cm is the breakdown field of SiO2, the insulator, not of silicon.
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