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A power MOSFET is preferred to an IGBT at

  • A.high voltage and low switching frequency
  • B.very high current and low switching frequency
  • C.medium voltage with a low switching frequency
  • D.low voltage and high switching frequency

Answer: D

Correct answer: low voltage and high switching frequency

A MOSFET is a majority carrier device with no stored charge to remove, so it switches fast and has low switching loss, but its on-state resistance rises steeply with voltage rating. The IGBT has the opposite balance - conductivity modulation gives a low drop at high voltage, at the cost of a current tail at turn-off.

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