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MP SET 2022: State Eligibility Test, Electronic Sciences

  • Language: Bilingual
  • 40 pages
MP SET 2022 question paper, State Eligibility Test 2022, Electronic Sciences, page 1 of 40
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WP/PISfUJ2022                                                     Question Booklet No.



                                           Subject-ELECTRONIC SCIENCE
    SET                                          ■f^[#ET            ( i^r^ch )                  909000185
                                                    Paper 11 (Optional)
                                                           IciM^
                                                      Subject-Code-9
                                                                         am                ^^
    ar^wg;                                                     ~ Candidate should >vrite his/her
    Roll No.                                                     Roll No. in the given boxes

                                                                                         git wn/Total No. of Questions: 100
                    TP^/No. of Printed Pages : 36
     TlWrime: 2 tpJ^/Hours                                                                                      tpTifgr/Total Marks: 200




        ^         -Ljwi ^ 1 uiiMTgff 1*05 TITfeatg TRT-qr      'dtn "otviqiT     Sifiu «n^nj            <t»VM                (,               -r ^
       ^ 1 TRTg wr "aj^ atfeg cKt% ^           rjt*A<K ^^*11 1
     4                     igto-R^arTT^ to 2 atqT-g^                                                                              Lw^
     5* TiT^-HitoT ■% arra^ ^ g9T--^feraT if                                   3ito11                           ^^            wr-^ftor t
     6. g^'am-TIW ( ^.tTtT.3TTT. T?ftg) ttT                    ^                    ^          ..           ^ Sff?
     7 gnrar ^riT-Tra (ait"TnT.aut. "^fte) tit Iwf^ T«rnt tit aira?^                    ^                 ^ W ' __ „_)-qT^1^1
\
        ^ Ting) TIHT Miiiiqi 1       ^                              ,
     10. "f^vdt iraiT ■qjT 4ic«h^<iT. WT      3TTR qn" hmIm         ^1 ft. ^            jl •               . ., -4v^ i
     11. 3:05 ^ Ttftastr TWntt           Wt afr.Trq.aiR. ^          ^ Tlfq% ^                             ^          '
                                             ESfSTRUCTIONS TO THE CANDIDATES
        This QuestionBooklet is printedin two languages-Hindi andEn^h.Examinees can select any one of the
        two lanffuages according to their convenience.                                            o
        There are two papers in the State Eligibility Test. The first question paper (comp^soiy qu^dnpaper) as
        GeneralPaper on Teaching andResearch Aptitude. The second qu^onpaper is the
        examinee. Only one combined OMR sheet wiHbe provided for boththe questionpapers. The          paper of
        optional subject wiUbe given to the examinee at1p.m. The code of the s^ndquestionpaper ^ject
         by the examinee shouldbe markedin the OMR Sheet. The bookletnumber ofthe se<»nd^estionpaper has
         to be markedin the necessary entries. The examinee can start second question paper at 1:05
         100 questions inthe second questionpaper (optional subject). The sequence ofthese questionsis 51to 15^1^
         a combined OJMJt Sheet, the examinee should mark the answers of the second questionpaper m^e          of
         Second Question Paper. The examinee himself will be responsible for marking the answer m the wrong
         order.
         All ouestions are compulsory.                                                                          ^        .        • ■•■
         All questions carry equal marks. 2 marks will be given for each correct answer. There is no provisions for
         On^he cover page the number ofpages isindicatedinthe QuestionBooklet.The examinee shouldverify that
;        the requisite number of pages are attachedin the QuestionBooklet, otherwise he/she should ask for another
         QuestionBooklet.
      6.
      7. Kmdly maae necessary entnesuuvue Auawisi.                                                                                        ^      ^
      8. Examinee should do all rou^ work on the spaces meant for rough work m the pages givenm the Question
         Booklet and nowhere else, not even on the Answer Sheet (OMRShwt).                                e.u^x3i„Ai
      9. If there is any sort of mistake either ofprinting or of factual nature m any question, then out ofthe Binoi ana
          English versions of the question, the Hindi versionmilbe treated as standard.
      10, Use of any type of calculator, log table etc. is prohibited.                                 t • i a ' **i.
      11.Examinees.will leave the Examination HaR only after handing over the OMR Sheet to theInvi^tor at the
         end of the examination at 3rf)5 p.m.                                                       '
    S/9/2022/A
MP SET 2022 question paper, State Eligibility Test 2022, Electronic Sciences, page 2 of 40
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)*




             (SPACE FOR ROUGH WORK)




S/9/2022/A
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51.                                   ^                 2000 ^ 51. The resistivity of intrinsic semiconducfor
            1—c
              ^ TTf t i "^Tf^ |l, =0.18 m2
                  II                                                        is given as 2000 ohm meter. If p.^ = 0.18
                       1—<o
       volr' sec~'                           |j.^ = 0.04 ni- volr'          m^ volt"' sec"' and p.^ = 0.04
      sec"',                      a-TRp; w\^             ^ iirr             volt"' sec"', then the value of intrinsic           «.'
            :                                                               density         would be *

      (A) 1.42 X 10~^^ per m^ volr' sec"'                                  (A) 1.42 X 10~'9 per m^ volr' see"'
      (B) 1.42 X lO'^-per m3                                               (B) 1.42          10'^ per
      (C) 1,42 X 1019 pei- jn3                                             (G) 1.42 X 10'9 per m^
      (D) 1.42 X 10"'^ per                          volt sec               (D) 1.42 X 10"'^ per m^ volt sec

52.                                TT^                         f,    52.    An ideal diode is a two-terminal device
      ^:
                                                                           that ;
      (A)                                                  OMCI6K
                                                                           (A) Behaves like an ideal switch
                              t
      (B)     ^       ^^ oijci^K wt                                        (B) Behaves as a short circuit for

            t,^ ?iRi ^ 31^ sm    ^                                               current flow"in forward direction

      (C)     ^   ^^                                                       (C) Behaves           as       an   open   circuit
            t,^ ^ 31^                                          ^                 for current flow in reverse direction

      (D)                         "?T^                                     (D) All of the above


53.           ^ TO ^h14i<ui                            "TO f :       53. The diode current equation is given as :
                              ^ eV       >                                              / eV        \

      (A)                      e^^-1                                       (A) 1 = ^0 e^-1
                              \          >                                              \           /

                              ^       eV^
                                                                                        f"       £y>
      (B) I = Io 1-e^"^                                                    (B)   I= L       1-e^T
                              L          >                                              \           /
                              f -eV
                                      +1                                                f' -eV        ^
      (C) I = Io
                                                                           (C)   I = L e^^T+l
                                                                                        V             /


      (D) "STl^                      ^ ^^                                  (D) None of the above

(5)S/9/2022/A                                                                                                         P.T.O.
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^4.                     ^ ^ ^ ^^ f .
                                                           54. luruiel diode is also refeaed to as :
         (A)^
                                                               (A) Laser diode
         (B) Tpr
                                                               (B) Gunn diode
         (C)               ^rqte
                                                               (C) Esaki diode
         (D) <SH^CW
                                                               (D) None of the above

  55. LED t)' wfhr                           ;3jtH ^
                                                          55. The semiconductor material not used in
         3T4-qi(ri<^ "^T^af f ;
                                                               LED is :

        (A) GaAs
                                                              (A) GaAs
        (B) GaAsP
                                                              (B) GaAsP
        (C) f^Tf^
                                                              (C) Silicon
       (D)
                                                             (D) All of the abvoe

 56.                       ^                 ^           56, Which of the following is an incorrect
                (FET) ^ %TT 37^ t ?                          statement for FET (Field Effect

       (A)                     ^ ;^uiict) '^u||^ch           Transistor) ?

             t I                                             (A) It has negative resistance tempera
                                                                  ture coefficient.
       (B)                                 f
                                                            (B) It is a voltage controlled device.
       (C)      "0^7^               t
                                                            (C) It is a unipolar device.
       (D)         "^il^           "^ff^ diTslWI (BJT)
                                                            (D) It is more noisy than BJT (Bipolar
             ^ 3TfTO ^ t I
                                                                 Junction Transistor).
(5JS/9/2022/A
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57.                  (CNT)^             f^^Peif^d    57.     Which of the following is /nve for CNT
                                                            (Carbon Nanotubes) ?
                                             >
                                                            ' (A) Strength of CNT is 100 times that
      (A) CNT ^                       ^ ion
                                                                 of steel
            37fe t
                                                            (B) CNT         has   inferior   thermal
      (B) CNT ^                       ^M<4idl t                  conductivity

      (C) CNT ^ 31Tf^W^ Tl\ 2005 ^ ISTT                     (C) CNT was discovered in year 2005

      (D)          "^f     ^                                (D) None of the above

58.                  JFET ^ 3#t^kR 5FiW              58.    The maximum transconductance for a

                                                            certain ^-channel JFET 3.5       ms. If
      ■ciiei=tiai 3.5 ms ^ I      Ij^gg = 25 mA,
      cK ^*g,^rii qlcxai          :                         Idss ~ 25 mA, then the pinch off voltage
                                                            would be :
      (t^ ^ I^gg                       "I,
                                                           . (Given I^gs is drain current when gate
      ^                    t) I                             source voltage is zero).
      (A) - 142.9                                           (A) - 142.9 volt
      (B) - 7.145 ^ .                                       (B) - 7.145 volt

      (C) - 14.29 ^                                         (C) - 14.29 volt

      (D) - 28.58 ^                                         (D) - 28.58 volt


59.          ^ ■Q=fT HMet ^                          59.    A quantum well is 2D nanomaterial

      f, 1^* :                                              structure having :

      (A) iqcrl             ^         ^          f          (A) Only one dimension in nano range

      (B) ^                 M^ ^ f                          (B) Two dimensions in nano range

      (C) ^ #1              ^ M^ ^ t                        (C) All three dimensions in nano range

      (D)                  ^ "q^*                           (D) None of the above

(5)S/9/2022/A                                                                                 P.T.O.
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60.                      ^       -qcf          ^     60. The orientation of molecules in a 4ayer
                     ^        3TRffqcr ^        ^          of liquid crystal can be changed by
        ti^ai ■ % ■: "                                     applying :

        (A)                                                (A) Magnetic field

        (B)                 ^                              (B) Electromagnetic field

        (C) 1^ ^                                           (C) Electric field

        (D) 3M^ckl          ^                             (D) None of the above

61.                               ^^ t ?             61. Which design approach takes less space ?
       (A) <rl^«t t^m                                     (A) Lambda rules

       (B) '^l^shln "fWT                                  (B) Micron rules

       (C) w fm                                           (C) Layer rules

       (D) ^                                              (D) Source rules


62.                      ^ aqrojs          "q^ cT^   62. During the logic 1 to 0 transition at the
       1 ^ 0 'mm ^ ^kR                                    output    node     of   CMOS-Invertor,
       ^ t :                                              capacitance discharge is through :
       (A) -^R-STq TTf^?T                                 (A) Pull-up resistance path

       (B)                          ^                     (B) Pull-down resistance path

       (C)                 '■^-•^\^ #ff -hM^i            (C) Both       Pull-up   and   Pull-down
              TR^                                             resistance path

       (D)      ciWdd ^ "RTSIRT ^                        (D) GATE terminal

(5)S/9/2022/A
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65. What is the resistance of a base diffused
         150 jim '^% 4-st^ 10 /jm f I ^                  resistor having a length of 150 (am and
                  W TlfM^ 100               t,           width of 10 pm, if its sheet resistance is
        ^            ^ 1TH ■^trjT .                      100 Q/square ?

        (A) 500 12             (B) 1000 Q                (A) 500 Q            (B) 1000 Q.

        (C) 15oOn              (D) 2000 n                (C) 1500 n           (D) 2000 n

 66.                tllVi f^TTrhr '4* tl|^e^<U|    66. The main purpose of metallization in
                       ^               f .              fabrication of IC is :

        (A)                                 ^           (A) To protect the chip from oxidation

       (B)            -^rf^ tT^* ^ 3^yxj^ ■^'           (B) To     interconnect     the   various

                                                             components of the circuit

       (C) itz 1^            ^ ii ^ ^                   (C) To act as a heat sink

       (D)                 ^ ^ -JT^*                    (D) None of the above

67.           ^iWT          'n' ^811   "a^ ^
                                                   67. What type of line separates the       and
       ■^rf^R^ ^ 1^ "a^                     31OT
                                                        y type transistor in stick diagram ?
              ^TIclT ^ ?
                                                       (A) Black line
       (A) «hi(n1
                                                       (B) Demarcation line
       (B)             cTTf^

       (C) TT^r                                        (C) Arrow line

       (D) "sa^        ^                               (D) None of the above

(5)S/9/2022/A
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ir! •




68.                                             ~<^'^ I fj^'. In IC fabrication the term 'Wafer
                                                                   means:




      (A)                               ^         ^                (A) Putting a cap over IC          "

      (B)               ^ Hciefl fs^             i^nsi             (B) A thick disk or slice of semiconductor

                                            Wk ^                         used for fabrication of IC

                   t                                               (C) A microscope for testing each IC

      (C) MCHcti                1kT ^             cilCil                 chip

                                                                   (D) A glass plate with desired pattern of

      (D)                           'QIW                                 difilision



69. TO TO^-                             "I" :              69. Unit of current density is :

      (A)                         (B)                              (A) Ampere/m^            (B) Ampere/m^

      (C)                         (D) ^^pW-k2                      (C) Ampere - m^ (D) Ampere - ra^

70.         1^ MOSFET ^ k eraf 'U                          70. In a MOSFET, if the gate has length *L\

      tk               'W' t,               ■rtelf 'tj             width 'W', oxide thickness              and

      t cI8?T 3iT=HHI^^                    'e^' %, eft             oxide permittivity '       then the formula

      fti^lRdl ^ ^ #n :                                            for gate capacitance is :


      (A) C.=-x^
            L  r
                   W        e
                                                                   (A) C.=^x^
                                                                         L  L

                   WL                                                           WL
                                                                         C =
      (B) c.=                                                      (B)
                                                                                ^Jox
                   ^ox^ox

      (C)                                                          (C)
                   WL
                            V/L                                                        WL
      (D) C,=e^x                                                   (D) Cg=eaxX

(5)S/9/2022/A                                                                                             P.T.O,
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MP SET 2022 question paper, State Eligibility Test 2022, Electronic Sciences, page 11 of 40
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73.                  ^                         73. In a Thevenin's equivalent circuit of
                                                    voltage ^TH and resistance R-j^, then
      ^TH                   ^XH   ^   yRi^'T
                                                    power dissipated in a load of resistance
      Rl^I                        :
                                                    Rl Q. is given by :
      (•^) ^TH ^^TH
                                                   (^)
            'v-''
               *TH                                               \2
      (B)            xRi.                                 V.TH
            vB-ray                                 (B)                XRl


               ^TH
                     xRTH                                 "m
      (C)                                                             xRTH
            Ul                                     (C)
                                                           Rl

            ^ y*TH Y xRl                                     'TH
      (D)                                          (D)                   XRl
               R.jj,+ Rl^


74. ^ F(j)= 1/(^+2) t, (it /(/) #11: 74. If F(4=1/(s+2), then /(/) is
      (A) e^'uit)                                  (A) e"u{t)
      (B) e-"u{t)                                  (B) e-"u{t)
      (C) u{t-2)                                   (C) «(r-2)

      (D) u{t+2)                                   (D) u{t+2)

                                                                               az
         az-

75. (^z-af ^ ^3^ z-sjrawf t                    75. Inverse z-transform of
                                                                             (z-a),2 IS :

      (A) a^u[n]                                   (A) a^«[n]

      (B) a"u[n]                                   (B) a"K[n]

      (C) 2a^u[n]                                  (C) 2a^a[n]

      (D) na"u\n\                                  (D) na"u[n]

(5)S/9/20?2/A                                                                          P.T.O.
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76. e^'^' ^ 4)1 Rq< "WOT f :                           76. The Fourier transform of               is
                 1
                                                                                1
       (A)
             2+jGi                                               (A) 2+70)

                 1
                                                                                1
       (B) -2+70)
                                                                       -2+yco
       (C) 27c5(o)-2)                                            (C) 27c6(o)-2)
       (D) 23r6(o)+2)                                            (D) 27c6(o) + 2)

                                                         7T
                                                         / /.    rpc«)_             — represents an :
 "■                                 Trt- S        »
                     ch-(.ai t" :
                                                                 (A) RC impedance
       (A) RC
       (B) RC                                                    (B) RC admittance

      (C) RCW^ 3^^ RLT^f^t^                                      (C) RC impedance and an RL admittance
                       I


      (D)        T^sft^                                         (D) RL admittance

 78. u{t--2) ^ eirara                        ^:         78. The Laplace transform of m(/-2) is :
                                                                            1
      (A)   (j+2)              (B)    (^-2)                     (A)   (s + 2)         (B)   (^-2)
                                      .-2j

      (C) —                    (D)                                    ^2s                   --25
             S                         5                        (C) —                 (D)
                                                                                             s

         5+2

      (5 + 2)^ +1 ^                           "OTcR^    79. The inverse Laplace transform of
                                                                   5 +2

                                                                (5+2)Vi
      (A) e"'cos2r             (B) e-'sin2^
                                                                (A) e-'cos2/         (B) e"'sin2f
      (Q e^'cos2/             (D) e*^'sin2/
                                                                (Q e~^'cos2t         (D) e~^'sin2/
(5)S/9/2022/A                                      10
MP SET 2022 question paper, State Eligibility Test 2022, Electronic Sciences, page 13 of 40
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80. WnRm ^^ t, ^                                    80. Aliasing      occurs    when     sampling

      ■ CO, ^ t :                                        frequency O), is :

      (A) CO, =0                                        (A) o), =0

      (B) co,>2co„                                      (B) a),>2fl)„

      (C) co,>co„                                       (C) co,>©„

      (D) m,<2co„                                       (D) ffl,<2©„

81.          ^ aro^ nfcRtsi                ^ 81. Efficiency             of   Half-wave   rectifier

            3i^cR0                  ^ Wqim)              neglecting the forward resistance of

      ^               f:                                 diode is :

             2
      (A) rr
            n



            _4
      (B)                                                ®7
             s                                                 8
                                                        (C) -r
                                                               n



      (D)                       ^                       (D) None of the above


82.              Cs
                       ^FTftPT                      82. The collector-to-base biasing is having

                                                         stability factor.     Ae value,obtained

      (to^)                         TIRT iTR   :         by the fixed-bias circuit.

      (A) ^ter             "I                           (A) Smaller than

      (B) ^^ t                                          (B) Larger than

      (C)                   f                           (C) Equal to

      (D)                  ^^         ■                 (D) None of the above

(5)S/9/2022/A                                  11                                          P.T.O.
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83.               ^                            83, Assuming operational amplifier is ideal
                                                      and if V^ is input, the output of the
                                                      inverting differentiator is ;

                 dV
        (A) V,=-RC^
                         at
                                                     (A) V, = -RC^
                                                                dV

                                                                       at




        (B) \=--^'
                    C dt



                    1 dV^                                          1 dV^
        (C) V.=-                                     (C) X, = -
                    RC dt                                         RC dt



                                                                  CdV^
                                                     (P) \ = -
                                                                 R dt



 84. 1^ 3TT^ qle^v3l RR^hTiRR "4*               84. An ideal voltage amplifier must have :
        ■qifty; :
                                                    (A) Zero input resistance and zero out
        (A) ^           "ffM?? afk ^
                                                         put resistance


                                                    (B) Infinite input resistance and infinite
    (B)                         3FRr 37T3235
                                                         output resistance
            3iM«i               ^
                                                    (C) Infinite input resistance and zero
    (C)                       sSk ^ 3^555
                                                         output resistance
            3rM?T

    (D)              "SM^T 3^ 37TO 3T[^H52          (D) Zero input resistance and infinite

            "sjM^                                        output resistance

(5)S/9/2022/A                              12
MP SET 2022 question paper, State Eligibility Test 2022, Electronic Sciences, page 15 of 40
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85. "0^                             500 Q            85. A half-wave rectifier is used to supply

      ^                 ete) ^ 24 ciW ■^.^.                  24 V (Lc. to a resistive load of 500 Q

                      t I               ^ 3m 3iMv            and the diode has a forward resist^ce of

      (T?n^                  50 n t eft W                    50 f2. The maximum value of the A.C.

                                                             voltage required at the input is :

      (A) 72.94 V             (B) 50.94 V                    (A) 72.94 V           (B) 50.94 V

      (C) 55.90 V             (D) 82.94 V                    (C) 55.90 V           (D) 82.94 V

86.                         (sbl^iPWH)               86. In Barichausen criterion, the loop-gain

                                                             is:
      (^5         ^ HH ^Icit ^ :
      (A)                                                    (A) Less than unity ..

      (B)         ^                                          (B) Equal to unity

      (C)         ^                                          (C) Greater than unity

      (D) <44^*^             "^ftf 'l^T                      (D) None of the above


87. -M i^ ^                    ^ tR «PfcT                87. For a ^ven transistor, the thermal
      8°C "afer         t 3k "Qp^ -WWT T^                    resistance is 8'X^/watt and for the ambient

      27°C t I ^                    3          ^             temperature     is 27°C. If the transistor
      3PI5zt^ ("fM^rftz)                t, ^                 dissipates 3 watts of power, the junction

      mwr Tj #11 :                                           temperature Tj is :

      (A) SVC                                                (A) 5l°C

      (B) 40'^C                                              (B) 40°C

      (C) 70°C                                               (C) 7(rC

      (D) dM^«Kl             ^ftf                            (D) None of the above

(5)S/9/20^2/A                                       13                                            P.T.O.
MP SET 2022 question paper, State Eligibility Test 2022, Electronic Sciences, page 16 of 40
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91.       TOT ^                                ^t        91. Which type of memory is non-volatile

                    ^            ^ ^ 3TOT OT                  and retains its data even when the power

      TORR Tl^ t ?                                            is turned off ?


      (A) RAM                                                 (A) RAM

      (B) ROM                                                 (B) ROM

      (C) DRAM                                                (C) DRAM

      (D) EEPROM                                              (D) EEPROM


92.       3-fe i<HlelH! ^                                92, A 3-bit analog to digital converter is

      y.llQlMI iTFT^ ^                         1^             designed to .digitize analog signals

              "f^RTT ■'RTT "t,        RTRT 0                  ranging from 0 V to 10 V. For this

        10.          t I ITT               ^    6             converter     the     binary      output

          I^ ^                       airjdgs ^:               corresponding to an input of 6 V is :

      (A) Oil                    (B) 101                      (A) Oil             (B) 101

      (C) 100                    (D) 010                      (C) 100             (D) 010


93. IW Ti^R^T ■^*                  ^ i^JTO "OTTh         93. In shift register, serial data can be
      ^R^ TTtft^ ^ ^ TlHHIcK ^ ■4'                            converted into parallel data by using :
                       "=511 ^TOTT f ?
                                                              (A) SIPO
      (A) SIPO
                                                              (B) PISO
      (B) PISO-
                                                              (C) SISO
      (C) SISO

      (D) PIPO                                                (D) PIPO

(5)S/9/2022/A                                       15                                          P.T.O,
MP SET 2022 question paper, State Eligibility Test 2022, Electronic Sciences, page 18 of 40
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94. Mod-9^^^ ^ I 94. How many minimum number of
             ^ aqmw ^ I flip-flops are required to construct a
      ^'                                           '         Mod-9 coimter ?
     (A) 3                   (B) 9                          (A) 3                    (B) 9

     (C) 10              (D) 4                              (C) 10                  • (D) 4

 95. HDL^                                    ^         95. "Which of thfe FoUo\\ing statements is true
              afe        ^             Pinrdf^d
                                                            regarding the analysis and design of
                                 t ?
                                                            digital circuits using HDL ?
     (A) HDL ^ wjhr                          ^
                                                            (A) HDL is used for simulating and
                                                                 testing digital circuits but not for
                %,                      ^ %IT
         ^ I                                                     their synthesis.

    (B) HDL                                 ^              (B) HDL allows designers to describe

                                                                 the behaviour and structure of
                     ■§■ I
                                                                digital circuits.
    (C) HDL ^                     ^ -^Tri^ ^
                                                           (C) HDL can only be used for small
                             ^              TjTT
                                                                scale digital designs and is not
                t 3%
                         iI
                                                                suitable for complex circuits.

    (D) HDL Wi{^ cRf ^                    ^                0^) HDL is limited to representing
                     f 3^ ST^srfTT^                             combinational logic and cannot
     .               ^           f I                           handle series circuit.

(5)S/9/2022/A                                 16
MP SET 2022 question paper, State Eligibility Test 2022, Electronic Sciences, page 19 of 40
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96. PHHrdP^d           ^                             96. The state diagram corresponding to the

      t:                                                   following circuit is :




  X                                                    X

  y                                                    y
                    Clock                                                 Clock

                               Flip-Flop                                            Flip-FIop

                      00,01,10                                              00,0.1,10


      (A)                                                  (A)

                      01,10,11                                              01,10,11


                       01,11                                                 01, II


                                  1 L )00, 10                                           1 L )00,10
      (B)                                                  (B).
            00,01                                                 00,01
                        01,11                                                01,11




                                       01,10                                                01,10
      (C) 01,10                                            (C) 01,-10
                      00, 11                                               00, II




      (D)                                                  (D)

                     00, 01,10                                             00, 01,10




(5)S/9/20g2/A                                   17                                           P.T.O.
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97. efff^
                                                        97. The most important parameters for
                                                             evaluating and comparing logic families
        (W), srqoq^ ^ f I pHHRrjRsjd                         are power dissipation. Which of the
            "fer                 "4'     ^                   following logic family has extremely
        (■^fe) ST^Toqif ^ f 7                                small power dissipation ?
        (A) ECL                                              (A) ECL

        (B) TTL                                              (B) TTL

        (C) CMOS                                            (C) CMOS

        (D) RTL                                             (D) RTL

 98.                 ^ 10 Aj|1^cJ«1 tr         t^RlT   98. How long time vwll it take to shift an
       ™       ^ 8 fe -^IT^ ^ SIPO                          8 bit number into a SIPO (Serial in
       TT          3qi3Z) 1?NS         ^ T^jMldRd           Parallel Out) shift register, if the clock is
                   %I3; f*dHI •WT          ?                set at 10 MHz ?

       (A) 80 ns            (B) 8 ns                        (A) 80 ns             (B) 8 ns
       (C) 800 ns           (D) 0.8 ns                      (C), 800 ns           (D) 0.8 ns

99.                                      ^Tl^cfivf     99. What is the logical expression for the
                   ^ t ?                                   cany out of a fiill adder ?

       (A) {AeB) + C,^                                     (A) (A©B) + Q„
       (B) (A-B)-(A©B)4-C,-„                               (B) (A-B)-(A@B) + C,„
       (C) (A©B) + (A-B)C,„                                (C) (a©b) + (a-b)c,„
       (D) A-B+(A©B)-Q„                                    (D) A.B+(A0B)-C,^
(5)S/9/2022/A                                     18
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100.                          ^                 100. Simplify expression using ^ Boolean
                                                       algebra :

       y = ABC+ ABC+ AC                                       _y = ABC+ ABC+AC

             -H^d "^^TFTT "i" :                        is :    .


       (A) AB + AC                                    (A) AB+ AC

       (B) BC+ BC+ AC                                 (B) BC+BC+ AC

       (C) AC + AC                                    (C) AC + AC

       (D) BC+ BC                                     (D) BC+BC


101.^^^ 64 K ^ srto ^ #I?I                        101. If data segment pointed out in excess of

              t, Tit ^ler ^       wflrr #Tr :          64 K then the data will be stored in :


       (A)                                            (A) St^k segment

       (B) 5RjMW                                      (B) Extra segment

       (C)                                            (C) Code segment

       (D) 37^^                                       (D) Instiuction segment


102. 8086                         "q^ # % 102. In 8086 addressing, the effective address
                                                       taken directly from the displacement field
 ■ t, 4i^dld! t :                                      of instruction, is called :

       (A) Tic^qd M.4nH'M ite                         (A) Immediate I addressing mode

       (B)            $4^14^4^^ v^n Tcte              (B) Register indirect addressing mode

       (C) "W ^1^4^               fffe                (C) Memory direct addressing mode

       (D)                        h1^                 (D) Based indexed addressing mode

(5)S/9/2022/A                                19                                           P.T.O.
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103.                          %r 1^, f5[CT     ^
                                                        103. A non-maskable, edge trigger that cames
                   WT                     ^ ^ %ii            type interrupt on receiving an interrupt
                   ^ ^JTW ?teT t ?
                                                             on which line :

         (A) NMI
                                                            (A) NMI Line

         (B) BHE ^
                                                            (B) BHE Line

         (C) TEST enn
                                                            (C) TEST Line

        (D) INTA ^                                          (D) INTA Line

  104. 8051                                     ^ 104. How many PORTs are there in 8051
        t ?
                                                            microcontroller ?

        (A) 1                (B) 2                         (A) 1                 (B) 2
        (C) .3               (D) 4                         (C) 3                 (D) 4

 105.              B ^                                105. The register B is used with the register A
        IPIT       ^^              8081                    in 8051 microcontroller for multiplicatioa
                   ^t I                    ^               and division operations. For other
        WT                    ^           ^                instruction it is treated as :

    (A)                  Tf^R^                            (A) Scratch pad register

    (B)                                                   (B) Accumulator
               s



    (C)                   Xpi1W<                         (C) PSW register

    (D) yluiH                                            (D) Program register

(5)S/9/2022/A                                    20
MP SET 2022 question paper, State Eligibility Test 2022, Electronic Sciences, page 23 of 40
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106. 8081 Hi55hictJdlcn< "f^T^                           106. The 8081 microcontroller can handle the

     ^hif                        "I" :                        following numbers of interrupt source, :

     (A) 3                                                    (A) 3

     (B) 4                                                    (B) 4

     (C) 5                                                    (C) 5

     (D) 6                                                    (D) 6


107. MOV A,@ Rj ^                        #TT :           107. MOV A, @ Rj will be :

    (A) Ri ^                                                  (A) Copy Rj to the accumulator

    (B)            ^ Rj           ^                           (B) Copy accumulator to Rj

    (C)          ^           ^ r^^=bl            Ri          (C) Copy the contents of memory whose

            t,         ■^*                                         address is in Rj to the accumlator

     (D)               "^TTOt ^             "4* ^rfqt        (D) Copy the content of accumlator to

            chiil f^RT^ HOI Rj ^ I                                 the memory whose address is Rj


108. 8051 Hl^s6Wild<                         3Bft^" 108. In a 8051 microcontroller family, special
     Tf^.t :                                                  function registers are :


     (A) A, B 3Tk PSW                                        (A) A, B and PSW

     (B) A ^*^1441 t,              B 3fk PSW                 (B) A is accumulator, only B and PSW

     (C) SP, DPH, DPL                                        (C) SP, DPH, DPL


     (D) TCON, SBUF, PCON                                    (D) TCON, SBUF, PCON

                                                    21                                         P.T.O,
(5)S/9/2022/A
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109. 8051                                   PiHldRsirf
                                                               109. In the 8051 microcontroller family, which
        ■^' ^               f^chrM      t ?                         one of the following options is true ?

       (A)                    ■^' afpT^^ -[T^           ^           (A) An opcode is of one byte in each
               ^tclT t" I
                                                                        instruction.


       (B) TT^ arrq^ ^                          t^*                (B) An opcode has variable number of

              ^              HRcicfnl^i ^ f I                           bits in an instruction.

      (C)             ^Tn^tiU ^ yc^ch"                  "4'        (C) An opcode must have the oprands
                           ^ Rfe #rT ^irf^ I                            also specified in each instruction.

      (D) 3TR^, -ytoFT cbl^idi ^                                   (D) Opcode bit cannot coexist with the

             "^" "^rrsiT       "^i^" -Rt^             t I              bits for the program counter.

 110. 8051 Hl^sblchual^^^ ^ ^ ^                        :^-    110. To execute a program in an external

     3toPT-                          %TT,             ^           memory by the 8051 microcontroller,
     "?Rtt     ■qif^y. :
                                                                  EA should be :


     (A) ^                                                        (A) Low

    (B) 3Tte                                                      (B) High

    (C) ^                                                        (C) Zero

    (D) ^a'pi                                                    (D) Independent

{5)S/9/2022/A                                          22
MP SET 2022 question paper, State Eligibility Test 2022, Electronic Sciences, page 25 of 40
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111. ^        A          B W         f % 111. Two vectors A and B are such that

    A+B       A-B   ,      A       B ^^          A +B     A-B , then the angle between



   ^ #TT :                                       A and B will be :


   (1^ t A ?s:0 ^ B ^iO)                        (Given A ^0 and B 9^0).


   (A) 0°                                       (A) 0°

   (B) 90-^                                     (B) 90°

   (C) 180°                                     (C) 180°

   (D) 45°                                      (D) 45°


112.^ 371^ Q, R 1^r?2TT ^          ^ ^ 112. If charge Q is spherical symmetrically
                                                distributed over a sphere of radius R,
                        ^ l^ciRd    cl^
                                                then the electric field intensity at a

                                                distance V from the centre of sphere
    (.<R) :
                                                will be (/• < R.) :
    (A) R. ^              ^t
                                                (A) directly proportional to R

    (B) ^ ^                 ^t
                                                (B) directly proportional to ^
                                                                                 1




    (C) r ^ ^HI^HIdl ^ t                        (C) directly proportional to r

                                                                                 1
    (D)       ^            ^t                   (D) directly proportional to


                                          23                                         P.T.O.
(5)S/9/2022/A
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'r^4

    113. r           ^                 ^      TO I 113. A current-carrying loop of radius r
                                                           carries current I and is placed in a
                    ^B         1^ "STO        TO f         uniform magnetic field B such that the
                ^ B ^ -fen ^^ TO ^                         direction of B is perpendicular to the
           tI        ^ tR to4           ^^itoN To         plane of loop, then the magnetic force on
          ^ TO ^ :
                                                          the loop will be :
          (A) IrB              (B) ^                      (A) IrB                (B) Zero
          (Q KlrB              (D) 2KlrB                 (C) TtlrB               (D) 2jrIrB
   114.         "^8^ 2 ^ell<l/#PIH/#qt2              114. If earth receives 2 cal/min/cm^ solar
          TO! TOft %, -^ -^ Uhiui if
                                                         energy, the value of electric field in this
          ^ ^ TO              ^:                         radiation is-nearly :
        (A) 1400 ^te/rte
                                                        (A) 1400 volt/meter
        (B) 377^WTfe
                                                        (B) 377 volt/meter
        (C) 726
                                                        (C) 726 volt/meter
        (D) 4.2 X io4 -cjloTi/Hld^:
                                                        (D) 4.2 X lo'* volt/meter

 115.       TO l^lcr^TOfhT TO TO "^TO if        115. If an electromagnetic wave propagating
        (i^R#         ^=              e^=2.3 f)      in a medium (for which |i = R(, and
     ^ TO             t, ^ TO tttTO          TO         g^=2.3), then the speed of the
     ^ "TOT           :
                                                       electromagnetic wave will be : "
     (A) 3 X IQS
                                                       (A) 3 X 10^ meter/second
    (B) 1.3 X IQS Tftro^^yrrg-
                                                      (B) 1.3 X iqS meter/second
    (C) 1.97 X IQS -qtro^TO?
                                                      (C) 1.97 X 10^ meter/second
    (D)                ^^                             (D) None of the above

(5)S/9/2022/A                                  24
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116.                            mR-^<         ^         116.   The principal or dominant mode cut otF
         ^ A              ^             ■^* ITH^ ^             frequency for rectangular cross-section
                          ^ %TT             3TT^               (having dimensions a and b) waveguide
       t :                                                     is given by :

                        t?                                                           rj'
       (A) co^„ = ncJ^-i-^                                     (A) (0^„ = 'ric^l—+^2
                                                                                 a



                   nc                                                      Tic
       (B) ®oi=y                                               (B) ®oi=y

                   7UC                                                     TtC
       (C) ©0,=                                                (C) ©01 ~
                      a                                                    a



       (D) a)oj=nc                                             (D) ©o,=7CC


117.                ^         aifeclH                   117. In      a broadside array, the maximum
       t :                                                     radiation occurs :

       (A) ^ ^ 45° -qi                                         (A) at 45° to the array

       (B) ^ ^ 373!^                                           (B) along the array

       (C) ^ ^ 60° "qr                                         (C) at 60° to the array

       (D)        "^" 3lfiiQl+^qq^                             (D) perpendicular to the array

                                                        118. In a Klystron oscillator the resonator first
118.         Rkrl^H "qtf^                 ^ "q^R
                                                               nearest to the cathode and second nearest
       PicbddM ^sqr           fe^FT sT^qrqF ^
                                                               to the cathode are respectively known
       ITOT:          "^^nHT t" :
                                                               as:


       (A) ®FF                                                 (A) Buncher and Catcher
       (B)        ^                                            (B) Catcher and Buncher

       (C) "^FK                                                (C) Output resonator and Buncher

       (D) "Rrf^ aq^qrqq?                                      (D) Input resonator and Buncher

(5)S/9/2022/A                                      25                                             P.T.O,
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119.                          qfft 'chluD-M 3TI^ 119. If a double resonator Klystron is
                                                            operating at an angular frequency co, then
          ®^                    cileedl Vq ^
                                                           the relation between d.c. accelerating
              ^t :
                                                           voltage Vq and co is given by :
         (A) VoOcQ)2          (B) Vo«:0)                  (A) Vpocco^           (B) Voocco
         (C) Vq            (D) Vo occo^^^                 (C) Vo°=(b"2          (D) Vqocco^'^
  120.                mm        ^ i{ -w^ m           120. To avoid the damage in radio frequency
         1wif^ \Pid ^ di^rnldJi        ^ 3TOT             transmission and to isolate the receiving
                                                          unit from transmitting pulses :
        (A) TT^           "51^ ^ f                       (A) An attenuator is used

        (B)               "ST^         f                 (B) A duplexer is used

        (C)                     ^t                       (C) An amplifier is used

        (D)             ^1Ri^         ^klT t             (D) A local oscillator is used

 121.         TTfer
                                                    121. The noise that appears in active electrical
        ^             (Wtt)           ^                  devices due to the random behaviour of
              ^^ t :                                     charge carriers is known as :

    (A) °5l^d HT^'U                                     (A) White Noise

    (B) ^TRTT                                           (B) Johnson Noise

    (C) r4^d»<                                          (C) Flicker Noise

    (D) ?1TS                                           (D) Shot Noise

(5)S/9/2022/A                                  26
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122.                                                 CO^
                                                                  122. If 0)„ is the maximum frequency
                                                                       component of the baseband, then the
         ^ AM                 ^ ^■c^'Ji            "Jl-si^
                                                                       transmission bandwidth of AM signal
       i\^ :                                                         • will be:


                                      (®-J                             (A) a                  (B)
                                                                                                    K)
       (A) 0)„                  (B)                                              m




       (C) 2C0,                 (D) 0                                  (C) 2ffl               (D) 0


123. RMfdHsld                                         ^           123. Which of the following is not a
                                                                       characteristic of Photodetector ?
                          t ?
                                                                       (A) High quantum efficiency
       (A) "3^ cWI*<iH
                                                                       (B) Low dark current
       (B) 1^ ^
                                                                       (C) Adequate spectral and frequency
       (C)                   "^3;^* 311^ SI^feT                                response


       (D)                ^ =t>l^ ddl                                  (D) None of the above

124.          f^til M-^iRI              *=tTl< ^                  124. If refractive index of material of core of
                          ' |Xi' W           ^                         optical fiber is ' llj ' and that of clad is
             3TO#Tf^ 'IJ,^'              NA #]T :                      ' [ij    then its NA is :

              (l^i-M-a)
       (A)                                                             (A)


       (B)                                                             (B)


       (C)                                                             (C)




                                                             27                                             P.T.O
(5)S/9/2022/A
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125.             ^
           ■»
                                                   125. Companding is used to :
          ? I
                                                         (A) overcome quantizing noise in PCM
          (A) PCM ^                 -OT^T
          (B) PCM HRFftZT ^ R-t[lc^< if 3TRIP7          (B) allow amplitude limiting in the

                      tR^nkui ^                              receiver of PCM transmitter

     ■ (C) PCM 1^ ^ RjHefT ^                            (C) protect small signals in PCM from

                        ^ lifer ^                            quantization deformation

       (D) PCM feft^ "^f fq^ -qi^                       (D) overcome impulse noise in PCM
                                                            receivers


  126. PIN Wileilsiql^ IRJW ^                     126. PIN Photodiode works as photodetector
                t, ^ ^ ^ t ;                           when connected :

      (A) 37?i arfro                                   (A) Forward biased

      (B) ^ 3#FT^                                      (B) Reverse biased

      (C) ar-^rf^Fm                                   (C) Non-biased
     (D) ^ cit (A) ^ (C)                              (D) Either (A) or (C)

 127. ^            Mi :                          127. Baud rate is :

     (A) eA^fll fe HRPTR ^ ^                          (A) always equal to the bit transfer rate
     (B)           37iq^ "^lei ^        ^            (B) equal to twice the bandwidth of an
                                                          ideal channel

     (C) fe^fer ^ ^                                  (C) not equal to signalling rate
    (D) TTqr 37Tq?f         ^^          ^            (D) equal to one half the bandwidth of
            auMt                                          an ideal channel


(5)S/9/2022/A                               28
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rI   *.


In
                                                128. Satellites     used    for   intercontinental

                                                     communication are known as :


       (A) WT^                                      (A) Comsat


       (B)                                           (B) Domsat


       (C)                                           (C) Marisat


       (D)                                          (D) Intelsat
                                                            «




129. Q-fe^ ^ t :                                129. Q-switch laser is :


       (A)                                           (A) Continuous laser

       (B)           ^                               (B) Short burst laser


       (C) n^F^M "SRT          Pi^Fhi                (C) Laser output by switching

       (D) ^          ^                              (D) Low power laser


130.                     Wg, "f^TR^      'if    130. If 'Xq'        is     the    wavelength    of

             STNicfcT Ti^^fq Tj^n^ ^ OT "dMf         monochromatic light, ^(T is diameter of

       '^q', -^AR-^d 3N^ 'NA'           ^^           core and 'NA'is numerical aperture, then

       3RTm ^ #1 V WIT ^ ^^ :                        V number of this optical fiber will be :

              ndX^                                         TidXr,
       (A)                (B) :^oi/NA                (A)                     (B) X^dNA
               NA          I
                                                            NA

              tu^A                NA                       TtdNA                     NA
       (C)                                           (C) ^                   (D) itdX,


(5)S/9/2022/A                                  29                                           P.T.O,
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131. DIAC ^             ^ ^ ^^ I .
                                                        131. DIAC is also called ;
           (A) fs^^ilq        8?Rf^
                                                             (A) Bidirectional Diode Thyristor
           (B)                   8^pTffel
                                                             (B) Unidirectional Diode Thyristor
        (C)                    siFTffe^
                                                            (C) Multidirectional Diode Thyristor
        (D)         ^gpfe
                                                            (D) Directional Diode Thyristor
   132. "PfRf^ffw ■^'                      TRIAC ^ 132. Which of the following is not a
                     ^ t ?
                                                            characteristic of TRIAC ?
       (A)
                                                           (A) Negative resistance
       (B) ^ efif^
                                                           (B) Five terminals
       (C) -m it.vj\.
                                                           (C) Four P-N junctions
      (D) tgcTTO
                                                          (D) Bilateral conduction

 133. -qm Zff^ ^                               ^
                                                     133. The vertical structure of power transistor
                 ^ ^icil "i", cKil'f^ "q^ .
                                                          is preferred because it :
      (A)           ^ qTq[q Tif^q ^
                                                          (A) increases the thermal resistance of
            t
                                                               transistor

     (B)                 -Srf^sr ^
                                                         (B) decreases the on-state resistance
     (C)           HR-^^             qi^
                                                         (C) decreases the cross-sectional area
                 ^ ^ ^ TO 31^ M t                             through which device current flows
    (D) iroro                  -spqj f
                                                        (D) decreases the breakdown voltage
(5)S/9/2022/A                                   3q
MP SET 2022 question paper, State Eligibility Test 2022, Electronic Sciences, page 33 of 40
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134.          "Rte OT PHHrdHsId                  134. Which one of the following advantages
       dM^lPldl ^^^ t ?                               is not possessed by DC motors ?

       (A)                                            (A) Very low starting torque

       (B) 37?^ ^                                     (B) Extremely low maintenance

       (C) ^ 1¥m ^                                    (C) Wide range of speed control

       (D) siraH ^ ^ tsNM                             (D) Simple and less expensive control
                                                          methods


135.                        TfR7 ^               135. Which of the following assumptions is
       MRdicrMdl WI t ?                             ^ true for armature controlled DC motor ?

       (A) "3?^ ^                        TO ^         (A) Torque developed is inversely
           oJcTOT^^TTcft     f I
                                                          proportional to armature current.
       (B) ^^ -qfM^ "3^^ ^t I
                                                      (B) Field is given variable excitation.
       (C) HK-q            "TO^         "did ^
           <H^i:iHidl       t I                       (C) Back emf is proportional to speed.

       (D)^ Pdddldi W ^ "^TT^T MRcjPcid               (D) Coefficient of friction varies with
                  t I                                      speed.

136. "P;^ ^."Ht". fta              ^ ^ TT^       136. A seperately excited DC motor is driven
                 ^ TO         ■« t I -311#^           by a converter drive. The armature
       %3dT ^ ak 500 %e ^ ^ MRdRid                    voltage is variable between 0 and
       ^ t I "^if^ 3TfTO?FT 3TT#cR                    500 volts. If the speed of motor is
       500        sfR wrf 3TI^ 60 Hz ^                1800 rpm at armature voltage of
             fte ^ 1800^.3I.1tt. t, ^                 500 volts and supply frequency of 60 Hz,
             37T^ 300 N-m Riy., 37T^^ TOT             then for a load torque of 300 N-m, the
             :                                        armature current is :

       (A) 5.2 A            (B) 3.1 A                 (A) 5.2 A           (B) 3.1 A

       (C) 113.0 A          (D) 11.5 A                (C) 113.0 A         (D) 11.5 A

(5}S/9/2022/A                                 31                                        P.T.O,
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I




                                                      139. If in a proportional integral controller in
139.       ^
                                                             the parallel configuration, V^ is the
                                                             process variable voltage, P is the
              t, P w^wt                         t,
                                                             proportional controller gain, I is the
       I            PlM^=t)      ^       Vg                  integral controller gain and Vg is the
       c^Wdi i, Vqo                        t, ^              error voltage, Vqq is the offset voltage,
       aiT^Z^S ciWdl Vout            :                       the output voltage Vo^t is given by :

       (A) V„„,= P.Voo+ ijv.t?/                            (A) v„„,= p.Voo+ ijv.rf;    %




       (B) V„„,= P.V,+ lJv<„fif^                             (B) V„„,= P.V,+ljv„„rff
       (C) v„„,= P.v,+ijv,rfr+v„„                            (C) v„„,= p.v,+ijv,rf;+v„„

       (D) v„„t = P.Vp+ ijv„rf;+v,                           (D) V„„,= P.Vp+ ljv„„<//+ v,

140.       "^Tf^ zff^T^           1?^ M^lIchK ^       140.   A power transistor switch is mounted in

            ^         I^IT t,        3.5 ^ w                 a square-shaped heat sink, which

       ^ ^ t I ^ <i\\ki«.                20°C                develops a power loss of 3.5 watts. The

        180°c ^                 ^ 40°C/W      ^              transistor is linearly case derated from

            "fefe               t 1 ^ ^ 1^                   '20°C to 180°C at 40°C/W. The heat sink

       ^ ^ #Tt :                                             temperature is :


       (A) 100°C                                             (A) lOO^C

       (B) 80°C                                              (B) 80°C


  . (C) 40°C                                                 (C) 40°C

       ■ (D) 20°C                                            (D) 20°C

                                                     33                                          P.T.O.
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143.                                                        143. Spectrum analyzer is a swept frequency

             "I,     3i^#T          31^ ^RX?n "I :               receiver which provides display of :

       (A)         ^          3MH                               (A) Time against amplitude

       (B) 3WT ^                WT                              (B) Amplitude against time

       (C) 371^ ^               3TFTR                           (C) Frequency against amplitude
       (D) 3Tm ^ 1^^ air#f                                      (D) Amplitude against frequency

144.                "*3^:                        "?kn       144. The   Kelvin bridge is essentially a
       t, ^^ srifer                    -^f -jiM?? ^              Wheatstone bridge, when additional
       "^n^ "f :                                                number of resistors included is :

       (A) 2                 (B) 3                              (A) 2                (B) 3
       (C) 4                 (D) 1                              (C) 4                (D) 1

145.               aim Trrmr 10-^ ^ 1^em                    145. The   pH value for a solution with
          pHm*               'f",          5i^'§l[^Qri          hydrogen ion concentration 10"^ and
       aim'^^Timr 10"^ t I                                      hydroxyl ions concentration 10"^, is :
       (A) 5                 (B) 3                              (A) 5                (B) 3

       (C) 7                 (P) 4                              (C) 7                (D) 4        .

146. 100 mi 4iu^dl ^ 13;^ it.'qB.'QTT.'^Tt. ■               146. A PMMC instrument with a 100-turn
       aM4iiui m              ^ -^^4)14 "fimiT                  coil has a magnetic flux density in its air
       B = 0.2 T t I                   ^                        gaps of B = 0.2 T. The coil dimensions
       D=1 M3ffT/=1.5^t I 1mA                                   are D = 1 cm and / = 1.5 cm. The torque
       ^ mr         1^ 4i"-seil "41            "I" :            on the coil for a current of 1 mA, is :

       (A) 1.5 X 10-5 N.m                                       (A) 1,5 X 10-5 N.m
    (B) 0.7 X 10-3 N.m                                          (B) 0.7 X 10-3 N.m
       (C) 3 X 10-^ N.m                                         (C) 3 X 10-6 N.m

       (D)             ^^                                       (D) None of the above

(5)S/9/2022/A                                          35                                             P.T.O.
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m

                  (SPACE FOR ROUGH WORK)




}•




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             ft
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TV <*>|4   leTtT

             (SPACE FOR ROUGH WORK)




S/9/2022/A
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Source: Madhya Pradesh Public Service Commission. Question paper published by Madhya Pradesh Public Service Commission.

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