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Bipolar Junction Transistors Questions and Answers

111.

Match List I with List II and select the correct answer using codes given below :

List IList II
(a) BJT(i) High β
(b) JFET(ii) Voltage regulator
(c) ZENER diode(iii) Insulated gate voltage controlled current
(d) MOSFET(iv) Reverse biased gate

Exam Year(s)

MH SET - 2018, SET Exam - 2018,

Answer: D

The correct matching is a-i, b-iv, c-ii, d-iii.

  • BJT: a high current gain β is its characteristic figure of merit (i).
  • JFET: the gate-channel junction is operated reverse biased (iv).
  • Zener diode: used in reverse breakdown as a voltage regulator (ii).
  • MOSFET: an insulated gate controls the drain current by voltage (iii).

The other codes give the BJT a reverse biased gate or a voltage-regulator role, or give the JFET the insulated gate, which belongs to the MOSFET; a JFET has no oxide layer between gate and channel.

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112.

In the following circuit, if RL = RC = 10 kΩ, then the value of Vo will be :

Transistor Q1 with its base fed from Vin = 0 through RB, emitter grounded, collector joined to VCC = +5 V through RC, and the output Vo taken at the collector, which is loaded by RL to ground

Exam Year(s)

MH SET - 2018, SET Exam - 2018,

Answer: B

The output is 2·5 V.

With \( V_{in} = 0 \) there is no forward bias on the base-emitter junction, so the transistor is cut off and draws no collector current. \( R_{C} \) and \( R_{L} \) then form a simple voltage divider across the 5 V supply:

\[ \begin{aligned} V_{o} &= 5 \times \frac{R_{L}}{R_{C} + R_{L}} \\ &= 5 \times \frac{10}{20} = 2.5\ \text{V} \end{aligned} \]

Zero would be the output of a saturated transistor, which needs base drive. The full 5 V would appear only with no load connected, and 4·55 V or 1·0 V do not follow from equal 10 kΩ resistors.

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113.

Ebers-Moll model of BJT has two coupled back to back diodes in parallel with controlled current sources.

Which of the following is/are correct for switching applications ?

(1) If two diodes are both in forward bias, then the BJT is in a low impedance state.
(2) If two diodes are both in reverse bias, then BJT is in a high impedance state.
(3) If two diodes are both in forward bias, then the BJT is in high impedance state.
(4) If two diodes are both in reverse bias, then BJT is in low impedance state.

Exam Year(s)

MH SET - 2019, SET Exam - 2019,

Answer: A

The correct statements are 1 and 2.

In the Ebers-Moll model the BJT is two back-to-back diodes, base-emitter and base-collector, with controlled current sources. When both junctions are forward biased the transistor is in saturation: it conducts heavily with only a small collector-emitter voltage, a low impedance state, like a closed switch (1). When both are reverse biased it is in cut-off: almost no current flows, a high impedance state, like an open switch (2).

Statements 3 and 4 swap these states, so every option containing either of them is wrong.

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114.

Determine the values of current amplification factor (\(\beta\)) of two different transistors having \(\alpha_{1} = 0.99\) and \(\alpha_{2} = 0.98\) :

Exam Year(s)

MH SET - 2019, SET Exam - 2019,

Answer: C

The current amplification factors are 99 and 49 respectively.

\[ \beta = \frac{\alpha}{1 - \alpha} \]

\[ \begin{aligned} \beta_{1} &= \frac{0.99}{0.01} = 99 \\ \beta_{2} &= \frac{0.98}{0.02} = 49 \end{aligned} \]

A small fall in alpha from 0.99 to 0.98 halves beta, because \(1 - \alpha\) doubles. '99 and 98' wrongly scales beta in proportion to alpha, and the options with 99 second reverse the two transistors.

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115.

A Si n-p-n bipolar transistor has the following parameters collector current Ic = 6 mA, common emitter current gain factor hFE = 120, operational temperature T = 300°K. Determine the mutual conductance of small signal transistor.

Exam Year(s)

MH SET - 2021, SET Exam - 2021,

Answer: A

The mutual conductance is about 0.23 mho.

For a bipolar transistor the small-signal transconductance depends only on the collector current and the thermal voltage:

\[ \begin{aligned} V_{T} &= \frac{kT}{q} \approx 25.9\ \text{mV at } 300\ \text{K} \\ g_{m} &= \frac{I_{C}}{V_{T}} = \frac{6 \times 10^{-3}}{25.9 \times 10^{-3}} \\ &\approx 0.23\ \text{S (mho)} \end{aligned} \]

The current gain hFE = 120 is not needed for gm; it would be used to find rπ = β/gm, about 520 Ω. 0.02 mho is ten times too small, and 2.3 or 4.33 mho would need currents of tens of milliamperes.

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116.

For effective working as an amplifier Base-emitter and Base-collector junctions of a BJT should be biased as :

Exam Year(s)

MH SET - 2021, SET Exam - 2021,

Answer: D

For amplification the junctions are biased forward and reverse respectively.

In the active region the base-emitter junction is forward biased, so the emitter injects carriers into the thin base, and the base-collector junction is reverse biased, so its field sweeps those carriers into the collector. The collector current is then controlled by the base current and nearly independent of the collector voltage, which is what makes the transistor an amplifier.

Both junctions forward biased is saturation, both reverse biased is cut-off (the two states used in switching), and reverse-forward is the inverse active mode, which gives very poor gain.

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