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Diode Circuits and Applications Questions and Answers

141.

In the filtered half wave rectifier circuit as shown below, the value of the DC output voltage is ............ .

Half wave rectifier: Vin = 240 V rms 50 Hz on a 20 to 1 transformer, a diode in series, then a capacitor C = 500 mF in parallel with a load RL = 1 kilohm across which Vdc is taken

Exam Year(s)

MH SET - 2025, SET Exam - 2025,

Answer: B

The DC output voltage is 16 V.

The transformer steps 240 V rms down by 20 : 1, and the capacitor charges to the peak of the secondary voltage less one diode drop:

\[ \begin{aligned} V_{2,\text{rms}} &= 240/20 = 12\ \text{V} \\ V_{2,\text{peak}} &= 12\sqrt{2} \approx 16.97\ \text{V} \\ V_{dc} &\approx 16.97 - 0.7 \approx 16.3\ \text{V} \end{aligned} \]

With 500 mF across 1 kΩ the ripple is negligible (the time constant is 500 s against a 20 ms cycle), so the output sits at about 16 V.

17 V is the ideal-diode peak, which ignores the diode drop. 12 V is the rms value, and 18 V exceeds the peak of the secondary altogether.

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142.

In a silicon diode, the potential barrier at room temperature is approximately

Exam Year(s)

Tripura Public Service Commission - 2026,

Answer: A

The barrier potential of a silicon diode is about 0.7 V.

The built-in potential across the depletion region of a silicon PN junction at room temperature is about 0.6-0.7 V. So a silicon diode conducts noticeably only once the forward bias reaches roughly that cut-in voltage.

0.3 V is the figure for germanium. 1.1 V (more exactly 1.12 eV) is the band-gap energy of silicon, not its barrier potential. 0.1 V is too low for any common semiconductor junction.

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143.

The reverse saturation current of a PN junction diode

Exam Year(s)

Tripura Public Service Commission - 2026,

Answer: B

The reverse saturation current increases with temperature.

The reverse saturation current comes from minority carriers generated thermally near the junction. Their number rises steeply with temperature, so the current roughly doubles for every 10 degrees Celsius rise in silicon and germanium diodes. This is why diodes and transistors are prone to thermal drift.

It therefore does not decrease with temperature and is not independent of it. By definition it is the current under reverse bias, so it does not depend on the forward voltage.

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