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Semiconductor Crystals Questions and Answers

1.

The Hall experiment is carried out with a non-magnetic semiconductor. The current \(I\) is along the \(x\)-axis and the magnetic field \(B\) is along the \(z\)-axis. Which one of the following is the CORRECT representation of the variation of the magnitude of the Hall resistivity \(\rho_{xy}\) as a function of the magnetic field?

Exam Year(s)

GATE Physics - 2023,

Answer: B

The Hall resistivity rises linearly with the magnetic field, the straight line through the origin in (B).

In steady state the Hall field balances the magnetic force on the carriers, giving \(E_{y} = v_{x}B = J_{x}B/(ne)\). So

\[ \rho_{xy} = \frac{E_{y}}{J_{x}} = \frac{B}{ne} \]

which is proportional to \(B\) and zero when there is no field. In a non-magnetic material there is no anomalous Hall contribution from a spontaneous magnetisation, so the line passes through the origin.

A constant (A) would mean a Hall signal at zero field; a falling curve (C) has the dependence upside down; and a curve that saturates into a plateau (D) resembles the quantum Hall or anomalous Hall behaviour, not the classical Hall effect asked about.

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2.

The temperature dependence of the electrical conductivity \((\sigma)\) of three intrinsic semiconductors A, B and C is shown in figure.

Plot of ln(sigma) against 1/T: three falling straight lines; A is the steepest, C is less steep and B is the least steep

Let EA, EB and EC be the bandgaps of A, B and C, respectively. Which one of the following relations is correct?

Exam Year(s)

GATE Physics - 2024,

Answer: D

The bandgaps satisfy EA > EC > EB.

For an intrinsic semiconductor the conductivity varies as

\[ \begin{aligned} \sigma &\propto e^{-E_{g}/2k_{B}T} \\ \ln\sigma &= \text{const} - \frac{E_{g}}{2k_{B}}\cdot\frac{1}{T} \end{aligned} \]

so on a plot of ln σ against 1/T the slope is -Eg/2kB. The steeper the line, the larger the bandgap. Line A is the steepest, C next and B the least steep.

The other orders mis-rank the slopes: putting C first, B first, or B above C would all require B or C to fall faster than the drawing shows.

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3.

Consider an n-type silicon in which the fully ionized dopant concentration is \(10^{17}\ cm^{-3}\). The intrinsic electron density is \(1.5 \times 10^{10}\ cm^{-3}\). Which of the following options correctly states the equilibrium hole concentration in \(cm^{-3}\)?

Exam Year(s)

IIT JAM - 2026,

Answer: A

The equilibrium hole concentration is \(2.25 \times 10^{3}\ cm^{-3}\).

With all donors ionised, the electron concentration in the n-type silicon is the donor concentration, \(n = 10^{17}\ cm^{-3}\). At equilibrium the mass-action law fixes the product of electron and hole concentrations:

\[ \begin{aligned} np &= n_i^{2} \\ p &= \frac{(1.5 \times 10^{10})^{2}}{10^{17}} \\ &= \frac{2.25 \times 10^{20}}{10^{17}} = 2.25 \times 10^{3} \end{aligned} \]

Holes are the minority carriers, so their number is tiny compared with the \(10^{10}\) of intrinsic silicon: doping raises one carrier type and suppresses the other. The remaining options do not follow from \(n_i^2/N_D\) with these numbers.

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